Ceramic Plates

Hunan Guoci New Material Technology Co., Ltd.

Alumina Ceramic Parts,Ceramic Plates
99% Alumina Ceramic Wafer Trays
8-inch 99% Alumina Ceramic Wafer Substrates

99% Alumina Ceramic Wafer Trays Custom 8-inch Alumina Ceramic Wafer Substrates


Material: Aluminum Oxide, Alumina, 95%-99.9% Al₂O₃

Sizes:Min-OD: 0.02mm; Max-length: 500mm

Customized: Can be custom for special sizes and shapes

Delivery Times:2 -25 days(depends on the structure and quantity)

Features:High hardness, High temperature resistance, Wear resistance, Corrosion resistance, High insulation

  1. Fracture Toughness (MPa·m¹/²): 3.8-4.4
  2. Refractoriness: 1500-1750℃
  3. Density: 3.7-3.95g/cm3
  4. Flexural Strength (MPa): 300-375
  5. Thermal Conductivity: 25-30W/M.K
Transport Package: Cartons, Wooden Box

Shipment: by sea by air by courier by post etc.

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Product Description

99% alumina ceramic wafer trays are made from alumina (Al₂O₃) ceramic material with a purity of over 99%, precision-machined for use in high-temperature and demanding processes to support and transport silicon wafers or other substrates (such as silicon carbide and gallium arsenide).

Alumina ceramic wafer trays are crucial precision components in high-end fields such as semiconductor, photovoltaic, and microelectronics manufacturing.

Key Characteristics and Advantages

99% alumina ceramic is a preferred material for wafer trays due to its superior overall performance:

  • Extremely high purity and chemical inertness: Prevents contamination of sensitive wafers during high-temperature processes (such as diffusion, oxidation, and CVD), ensuring process cleanliness.
  • Excellent high-temperature stability: Can operate continuously at temperatures above 1600°C without deformation or volatilization, making it particularly suitable for ultra-high-temperature processes such as crystal growth and annealing.
  • Outstanding mechanical strength and rigidity: Can withstand the weight of the wafer and repeated high-speed mechanical stresses, resisting bending or breakage.
  • Extremely low outgassing rate: In vacuum or inert gas environments, it releases almost no gas molecules, preventing interference with the process atmosphere.
  • Good thermal shock resistance: Can withstand rapid heating and cooling processes (although slightly weaker than aluminum nitride or silicon carbide, it generally meets most process requirements).
  • High hardness and wear resistance: Smooth surface, not easily scratched by particles, ensuring durability.
  • Excellent insulation: Completely insulating, suitable for processes requiring electrical isolation.

Main Applications

  • Semiconductor chip manufacturing: Wafer support in diffusion furnaces, oxidation furnaces, and LPCVD (Low-Pressure Chemical Vapor Deposition).
  • Power device manufacturing: High-temperature epitaxial growth and annealing processes for wide-bandgap semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN).
  • Photovoltaic industry: High-temperature coating and annealing processes for solar cells (especially N-type cells) such as PERC and TOPCon.
  • MEMS (Micro-Electro-Mechanical Systems) manufacturing: Various thin-film deposition and etching processes.
  • LED industry: Epitaxial growth on sapphire substrates.

99% alumina ceramic wafer trays are the unsung heroes in the semiconductor and high-end manufacturing fields. With their excellent high-temperature stability, chemical inertness, and high cost-effectiveness, they have become a reliable choice for supporting critical components in high-temperature processes. Although not as efficient as more expensive aluminum nitride and silicon carbide in terms of extreme heat dissipation and thermal matching, their comprehensive performance has secured them the largest market share, making them the standard and universal configuration for various furnace tube equipment.